CHARACTERIZATION OF THIN SIO2 GROWN BY RAPID THERMAL-PROCESSING AS INFLUENCED BY PROCESSING PARAMETERS

被引：19

作者：

EFTEKHARI, G

机构：

[1] Department of Electrical Engineering, State University of New York, College at New Paltz, New Paltz, New York

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 03期

关键词：

D O I：

10.1149/1.2056159

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Significant changes in the electrical characteristics of thin SiO2 grown by rapid thermal processing were obtained as the processing parameters were changed. The low leakage current corresponding to high barrier height was obtained at the growth temperature of 1000-degrees-C. The fixed charge density and breakdown voltage decreased as the growth temperature increased. Rapid thermal annealing at 1000-degrees-C improved the leakage current. Also, rapid thermal annealing improved the breakdown voltage and caused a reduction in the fixed charge density.

引用

页码：787 / 789

页数：3

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