MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE

被引：21

作者：

REINKE, J

WEIHRICH, H

GREULICHWEBER, S

SPAETH, JM

机构：

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 10期

关键词：

D O I：

10.1088/0268-1242/8/10/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The magnetic circular dichroism of the absorption (MCDA) Of V(Si)4+ in 6H-silicon carbide shows a strong temperature dependence. Within a crystal field approach the MCDA and g-factors of the hexagonal site defect could be explained, whereas the situation is more complicated for both quasi-cubic site defects owing to a dynamical Jahn-Teller effect

引用

页码：1862 / 1867

页数：6

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