GROWTH OF INGAASP BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

HOLAH, GD

EISELE, FL

MEEKS, EL

COX, NW

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1073 / 1075

页数：3

共 14 条

[1]

[Anonymous], 1981, IEEE J QUANTUM ELECT, V17

[2] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].

ARAI, S ;

SUEMATSU, Y ;

ITAYA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205

[3] LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS [J].

BHATTACHARYA, PK ;

KU, JW ;

OWEN, SJT ;

OLSEN, GH ;

CHIAO, SH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :150-161

[4] INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS - SIMPLE EXPRESSIONS FOR WAVE CONFINEMENT, BEAMWIDTH, AND THRESHOLD CURRENT OVER WIDE RANGES IN WAVELENGTH (1.1-1.65 MU-M) [J].

BOTEZ, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :178-186

[5] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[6] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399

[7] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

CHO, AY ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817

[8] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING [J].

FORREST, SR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :217-226

[9]

MOSS TS, 1962, INFRARED PHYS, V1, P111

[10]

NAGAJIMA K, 1978, J APPL PHYS, V49, P5944

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