HIGH-SPEED MICROELECTRONICS FOR MILITARY APPLICATIONS

被引：8

作者：

PECKERAR, MC ^{[1
]}

NEIDERT, RE ^{[1
]}

机构：

[1] UNIV MARYLAND, BALTIMORE, MD 21201 USA

来源：

PROCEEDINGS OF THE IEEE | 1983年 / 71卷 / 05期

关键词：

D O I：

10.1109/PROC.1983.12647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 666

页数：10

共 54 条

[1]

AIKEN J, 1979, IEEE J SOLID-ST CIRC, V14, P294

[2] REDUCTION OF LONG-TERM TRANSIENT RADIATION RESPONSE IN ION-IMPLANTED GAAS-FETS [J].

ANDERSON, WT ;

SIMONS, M ;

KING, EE ;

DIETRICH, HB ;

LAMBERT, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1533-1538

[3]

Barbe D. F., 1980, International Electron Devices Meeting. Technical Digest, P20

[4] X-RAY ABSORPTION AND EMISSION [J].

BIRKS, LS .

ANALYTICAL CHEMISTRY, 1972, 44 (05) :R557-&

[5] FULLY ION-IMPLANTED INP JUNCTION FETS [J].

BOOS, JB ;

DIETRICH, HB ;

WENG, TH ;

SLEGER, KJ ;

BINARI, SC ;

HENRY, RL .

ELECTRON DEVICE LETTERS, 1982, 3 (09) :256-258

[6] MEASUREMENT AND CALCULATION OF ABSOLUTE X-RAY INTENSITIES [J].

BROWN, DB ;

GILFRICH, JV .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :4044-+

[7] MEASUREMENT AND CALCULATION OF ABSOLUTE INTENSITIES OF X-RAY-SPECTRA [J].

BROWN, DB ;

GILFRICH, JV ;

PECKERAR, MC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4537-4540

[8]

BROWN DB, 1981, P TOPICAL C LOW EN X, P253

[9] X-RAY-SPECTRA FROM A GAS-PUFF Z-PINCH DEVICE [J].

BURKHALTER, PG ;

SHILOH, J ;

FISHER, A ;

COWAN, RD .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4532-4540

[10] CHARGE COLLECTION MEASUREMENTS FOR ENERGETIC IONS IN SILICON [J].

CAMPBELL, AB ;

KNUDSON, AR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2067-2071

← 1 2 3 4 5 6 →