STRAINED INGAAS/INALAS MQW ELECTROABSORPTION MODULATORS WITH LARGE BANDWIDTH AND LOW DRIVING VOLTAGE

被引：53

作者：

IDO, T

SANO, H

MOSS, DJ

TANAKA, S

TAKAI, A

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期

关键词：

D O I：

10.1109/68.329640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the improved modulation properties of a new strained InGaAs/InAlAs MQW electro-absorption modulator. This tensile strained MQW modulator shows low driving voltage (V15 dB = 1.2 V), large modulation bandwidth (f3 dB > 20 GHz), and a 10 Gbit/s eye pattern with a clear eye opening and high extinction ratio. The effective alpha parameter determined from waveform deterioration is 0.6, which is low enough for multigigabit long-haul fiber transmission systems.

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页码：1207 / 1209

页数：3

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