PHOTOGENERATED CARRIER SWEEP-OUT TIMES IN STRAINED INNX)GA(1-X)AS/IN(Y)AL(1-Y) AS QUANTUM

被引:12
作者
MOSS, DJ
IDO, T
SANO, H
机构
[1] Hitachi Central Research Laboratory, Tokyo 185, 1–280 Higashi-koigakubo, Kokubuji-shi
关键词
ELECTROABSORPTION MODULATORS; OPTICAL MODULATION;
D O I
10.1049/el:19940281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors propose and demonstrate the use of compressively strained barriers to reduce photogenerated carrier sweep-out times in InxGa1-xAs/InyAl1-yAs multiquantum well modulators, designed for lambda = 1.55mum.
引用
收藏
页码:405 / 407
页数:3
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