HIGH-SPEED PHOTORESPONSE IN A REVERSE-BIASED INGAAS/INP LASER STRUCTURE AT 1.54 MU-M - EXPERIMENT AND MODELING

被引：4

作者：

CHARBONNEAU, S

AERS, GC

MCGREER, KA

DAVIES, M

LANDHEER, D

LI, ZM

DELAGE, A

DION, M

TAKASAKI, B

CONN, D

MOSS, D

机构：

[1] MCMASTER UNIV,COMMUN RES LAB,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

[3] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.109733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report extremely efficient (approximately 100% internal quantum efficiency) and high-speed (approximately 120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 mum. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.

引用

收藏

页码：12 / 14

页数：3

相关论文

共 16 条

[1] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J].

BRENNAN, K ;

HESS, K ;

TANG, JYF ;

IAFRATE, GJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1750-1754

[2] PLANAR INGAAS PIN PHOTODIODE WITH A SEMI-INSULATING INP CAP LAYER [J].

CAMPBELL, JC ;

DENTAI, AG ;

QUA, GJ ;

LONG, J ;

RIGGS, VG .

ELECTRONICS LETTERS, 1985, 21 (10) :447-448

[3] HIGH-SPEED, SELF-PASSIVATED INGAAS PIN PHOTODIODE FOR MICROWAVE FIBER LINKS [J].

FAN, C ;

YU, PKL ;

CHEN, PC .

ELECTRONICS LETTERS, 1987, 23 (11) :571-572

[4] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].

FOX, AM ;

MILLER, DAB ;

LIVESCU, G ;

CUNNINGHAM, JE ;

JAN, WY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (10) :2281-2295

[5] OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER TRANSPORT IN GAAS ALXGA1-XAS AND IN0.53GA0.47AS IN0.52AL0.48AS MULTIQUANTUM WELLS [J].

GUPTA, S ;

DAVIS, L ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1992, 60 (12) :1456-1458

[6] TIME RESOLVED PHOTOLUMINESCENCE STUDIES IN A REVERSE BIASED QUANTUM-WELL LASER STRUCTURE [J].

HALLIDAY, DP ;

MOSS, D ;

CHARBONNEAU, S ;

AERS, G ;

CHATENOUD, F ;

LANDHEER, D .

APPLIED PHYSICS LETTERS, 1992, 61 (21) :2497-2499

[7] HIGH-SPEED CHARACTERIZATION OF A MONOLITHICALLY INTEGRATED GAAS ALGAAS QUANTUM-WELL LASER-DETECTOR [J].

JACKSON, KP ;

HARDER, C ;

BUCHMANN, P ;

DATWYLER, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (11) :832-834

[8] TUNABLE SUPERLATTICE P-I-N PHOTODETECTORS - CHARACTERISTICS, THEORY, AND APPLICATIONS [J].

LARSSON, A ;

ANDREKSON, PA ;

ENG, ST ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (05) :787-801

[9]

LI ZM, 1992, IEEE J QUANTUM ELECT, V28, P792

[10]

Littlejohn M. A., 1982, GaInAsP alloy semiconductors, P243