PHOTOCONDUCTIVE RESPONSE-TIMES OF INGAAS/INALAS MULTIQUANTUM-WELL WAVE-GUIDE MODULATORS

被引：2

作者：

MOSS, DJ

SANO, H

机构：

[1] Hitachi Central Research Laboratory, Tokyo 185, 1-280, Higashi-koigakubo, Kokubunji-shi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 18期

关键词：

OPTICAL MODULATION; PHOTOCONDUCTIVITY;

D O I：

10.1049/el:19931083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The pulsed photoconductive response times of 10 and 25 well InGaAs/InAlAs quantum well waveguide modulators are investigated. In both devices comparable sweep-out times for electrons and holes and significant reduction in internal quantum efficiency for fields < 200 kV/cm are observed. A dependence on bias voltage and quantum well number is observed which suggests that carrier recapture, or sequential tunnelling, is significant for fields near 70 kV but not for fields > 200 kV/cm.

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收藏

页码：1626 / 1628

页数：3

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