HIGH-SPEED PHOTODETECTION IN A REVERSE BIASED GAAS/ALGAAS GRINSCH SQW LASER STRUCTURE

被引：11

作者：

MOSS, D

LANDHEER, D

CONN, D

HALLIDAY, D

CHARBONNEAU, S

AERS, G

BARBER, R

CHATENOUD, F

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

[2] MCMASTER UNIV,COMMUN RES LAB,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report extremely efficient (approximately 100% internal quantum efficiency) and high-speed (approximately 25 pS FWHM) photodetection in a reverse biased GaAs/AlGaAs ridge waveguide single quantum well (SQW) GRINSCH laser structure near lambda = 830 nm. The impulse response is limited by device parasitics to 25 pS at large reverse bias voltages, and by photogenerated electron escape closer to flatband conditions.

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收藏

页码：609 / 611

页数：3

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