HIGH-EFFICIENCY HIGH-SPEED PHOTODETECTION IN A MONOLITHICALLY INTEGRATABLE INGAAS/INP MQW LASER STRUCTURE AT 1.5 MU-M

被引：4

作者：

MCGREER, KA

CHARBONNEAU, S

DAVIES, M

AERS, G

TAKASAKI, B

LANDHEER, D

MOSS, D

DION, M

DELAGE, A

机构：

[1] MCMASTER UNIV,CTR ELECTROPHOTON MAT & DEVICES,HAMILTON L8S 4L7,ONTARIO,CANADA

[2] HITACHI LTD,ELECT ENGN RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 03期

关键词：

INTEGRATED OPTOELECTRONICS; PHOTODETECTORS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved photocurrent measurements in a reverse biased InGaAs/InP ridge waveguide multiquantum well pin laser structure at 1.54 mum are reported. The pulse response of this monolithically integratable detector is approximately 150 ps FWHM with an internal quantum efficiency of approximately 100% at reverse bias voltages of approximately 5 V.

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页码：271 / 272

页数：2

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