PROBING OF IMPURITY CENTERS AND CONDUCTION LEVELS IN SEMICONDUCTING DIAMOND USING A MIMS SYSTEM

被引:2
作者
LEPEK, A [1 ]
LEVINSON, J [1 ]
HALPERIN, A [1 ]
机构
[1] HEBREW UNIV,RACAH INST,JERUSALEM,ISRAEL
关键词
D O I
10.1016/0375-9601(75)90639-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:345 / 347
页数:3
相关论文
共 3 条
[1]   FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].
MEAD, CA ;
SPITZER, WG .
PHYSICAL REVIEW, 1964, 134 (3A) :A713-+
[2]   BAND STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND [J].
SASLOW, W ;
BERGSTRESSER, TK ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1966, 16 (09) :354-+
[3]  
Williams R., 1970, SEMICONDUCT SEMIMET, V6, P97