A TECHNOLOGY CONCEPT FOR INTEGRATED DETECTOR ELECTRONICS WITH CMOS COMPATIBLE DEVICES

[1] BERGER M, COMMUNICATION

[2] Brown D., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P260

[3] STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2797 - 2802

[4] DUH KH, 1985, IEEE T ELECTRON DEV, V32, P662

[5] FABRICATION OF NMOS CAPACITORS WITH A LOW-VOLTAGE COEFFICIENT AT A SILICON FOUNDRY [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 54 - 56

[6] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830

[7] MANOLI Y, COMMUNICATION

[8] ION-IMPLANTED THIN POLYCRYSTALLINE-SILICON HIGH-VALUE RESISTORS FOR HIGH-DENSITY POLY-LOAD STATIC RAM APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1749 - 1756

[9] Stein E., COMMUNICATION

[10] VOGT H, 1985, ESSDERC EUROPHYS C, P265

[1] BERGER M, COMMUNICATION

[2] Brown D., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P260

[3] STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2797 - 2802

[4] DUH KH, 1985, IEEE T ELECTRON DEV, V32, P662

[5] FABRICATION OF NMOS CAPACITORS WITH A LOW-VOLTAGE COEFFICIENT AT A SILICON FOUNDRY [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 54 - 56

[6] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830

[7] MANOLI Y, COMMUNICATION

[8] ION-IMPLANTED THIN POLYCRYSTALLINE-SILICON HIGH-VALUE RESISTORS FOR HIGH-DENSITY POLY-LOAD STATIC RAM APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1749 - 1756

[9] Stein E., COMMUNICATION

[10] VOGT H, 1985, ESSDERC EUROPHYS C, P265