ION-IMPLANTED THIN POLYCRYSTALLINE-SILICON HIGH-VALUE RESISTORS FOR HIGH-DENSITY POLY-LOAD STATIC RAM APPLICATIONS

被引:18
作者
OHZONE, T
FUKUMOTO, M
FUSE, G
SHINOHARA, A
ODANAKA, S
SASAGO, M
机构
关键词
D O I
10.1109/T-ED.1985.22191
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1749 / 1756
页数:8
相关论文
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