ION-IMPLANTED THIN POLYCRYSTALLINE-SILICON HIGH-VALUE RESISTORS FOR HIGH-DENSITY POLY-LOAD STATIC RAM APPLICATIONS

被引：18

作者：

OHZONE, T

FUKUMOTO, M

FUSE, G

SHINOHARA, A

ODANAKA, S

SASAGO, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1749 / 1756

页数：8

共 25 条

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