GIGAOHM-RANGE POLYCRYSTALLINE SILICON RESISTORS FOR MICROELECTRONIC APPLICATIONS

被引：13

作者：

MAHAN, JE ^{[1
]}

NEWMAN, DS ^{[1
]}

GULETT, MR ^{[1
]}

机构：

[1] NCR,DIV MICROELECTR,FT COLLINS,CO 80525

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/T-ED.1983.21070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：45 / 51

页数：7

共 15 条

[1] ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON [J].

ANDREWS, JM .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :227-247

[2] INTERPRETATION OF HALL AND RESISTIVITY MEASUREMENTS IN POLYCRYSTALLINE SILICON [J].

GHOSH, AK ;

ROSE, A ;

MARUSKA, HP ;

FENG, T ;

EUSTACE, DJ .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) :237-260

[3] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :900-902

[4] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690

[5]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[6]

LU NCC, 1981, ELECTRON DEVIC LETT, V2, P95, DOI 10.1109/EDL.1981.25354

[7] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].

LU, NCC ;

GERZBERG, L ;

LU, CY ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830

[8] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1163-1171

[9] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1171-1176

[10]

MINATO O, 1981, P IEEE INT SOLID STA, V14

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