ELECTRICAL MEASUREMENTS ON ION-IMPLANTED LPCVD POLYCRYSTALLINE SILICON FILMS

被引：13

作者：

HUANG, RS

CHENG, CH

LIU, JC

LEE, MK

CHEN, CT

机构：

[1] NATL TSING HUA UNIV, INST APPL PHYS, HSINCHU, TAIWAN

[2] ERSO ITRI, IC DEV CTR, HSINCHU, TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 07期

关键词：

D O I：

10.1016/0038-1101(83)90021-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 665

页数：9

共 19 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J].

CARD, HC ;

HWANG, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :700-705

[3] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

Cowher, M.E. ;

Sedgwick, T.O. .

1600, (119)

[4] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J].

DAVIDSOH.US ;

LEE, F .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1532-&

[5] LATERAL POLYSILICON P-N DIODES [J].

DUTOIT, M ;

SOLLBERGER, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1648-1651

[6] DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON [J].

FRIPP, AL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1240-1244

[7] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

HIROSE, M ;

TANIGUCHI, M ;

OSAKA, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :377-382

[8] SURFACE ENERGY OF GERMANIUM AND SILICON [J].

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527

[9]

KAMINS TI, 1980, MARCOUX IEEE ELECTRO, V1, P159

[10]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

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