A NEW MOSI2/THIN POLY-SI GATE PROCESS TECHNOLOGY WITHOUT DIELECTRIC DEGRADATION OF A GATE OXIDE

[1] THE EFFECT OF IMPLANTATION OF PHOSPHORUS INTO SPUTTERED MOSI2 THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 933 - 938

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1723 - +

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] AN ELECTRON-MICROSCOPE INVESTIGATION OF THE EFFECT OF PHOSPHORUS DOPING ON THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 1971 - 1974

[6] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[7] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[8] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[9] PROPERTIES OF MO-SILICIDES IN SI-GATE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1174 - 1178

[10] Nishioka K., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P24

[1] THE EFFECT OF IMPLANTATION OF PHOSPHORUS INTO SPUTTERED MOSI2 THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 933 - 938

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1723 - +

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] AN ELECTRON-MICROSCOPE INVESTIGATION OF THE EFFECT OF PHOSPHORUS DOPING ON THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 1971 - 1974

[6] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[7] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[8] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[9] PROPERTIES OF MO-SILICIDES IN SI-GATE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1174 - 1178

[10] Nishioka K., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P24