RUTHERFORD BACKSCATTERING SPECTROSCOPY (RBS)

被引：8

作者：

GROB, JJ

SIFFERT, P

机构：

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1984年 / 8卷 / 1-2期

关键词：

D O I：

10.1016/0146-3535(84)90071-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：59 / 106

页数：48

共 113 条

[1] STUDY OF TIN DIFFUSION INTO SILICON BY BACKSCATTERING ANALYSIS [J].

AKASAKA, Y ;

HORIE, K ;

NAKAMURA, G ;

TSUKAMOTO, K ;

YUKIMOTO, Y .

[2]

ANDERSEN HH, BIBLIO INDEX EXPT RA

[3]

Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[4]

[Anonymous], 1968, SEMICONDUCTOR DETECT

[5]

Appleton B. R., 1970, Atomic collision phenomena in solids, P417

[6]

BAERI P, 1979, P MRS S LASER ELECTR

[7] STUDIES OF DEFECTS AND SURFACES BY CHANNELING [J].

BARRETT, JH .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :341-348

[8] MONTE CARLO CHANNELING CALCULATIONS [J].

BARRETT, JH .

PHYSICAL REVIEW B, 1971, 3 (05) :1527-&

[9] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

[10]

BOGH E, 1972, RADIAT EFF, V12, P13