CHARACTERIZATION OF OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY GA0.7AL0.3AS LAYERS BY SPATIALLY RESOLVED CATHODOLUMINESCENCE

被引：18

作者：

PAPADOPOULO, AC

ALEXANDRE, F

BRESSE, JF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.99526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：224 / 226

页数：3

共 13 条

[1] SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

LAURET, N ;

BRABANT, JC .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :472-474

[2]

BAFLEUR M, 1982, J CRYST GROWTH, V59, P521

[3]

BRESSE JF, 1987, SCANNING MICROSC S, V1, P205

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA A

[5] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUJIWARA, K ;

KANAMOTO, K ;

OHTA, YN ;

TOKUDA, Y ;

NAKAYAMA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112

[6]

HERAL H, 1986, THESIS P SABATIER U

[7] ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS [J].

ITO, T ;

SHINOHARA, M ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L524-L526

[8] DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X [J].

KUECH, TF ;

WOLFORD, DJ ;

POTEMSKI, R ;

BRADLEY, JA ;

KELLEHER, KH ;

YAN, D ;

FARRELL, JP ;

LESSER, PMS ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :505-507

[9] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATTESON, S ;

SHIH, HD .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :47-49

[10]

NAMBU K, 1986, J ELECTROCHEM SOC, V33, P601

← 1 2 →