A MEASUREMENT TECHNIQUE TO OBTAIN THE RECOMBINATION LIFETIME PROFILE IN EPI LAYERS AT ANY INJECTION LEVEL

被引：18

作者：

SPIRITO, P ^{[1
]}

COCORULLO, G ^{[1
]}

机构：

[1] CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2546 / 2554

页数：9

共 13 条

[1]

BELLONE S, 1978, ALTA FREQ, V47, P843

[2]

CHEN PJ, 1985, IEEE T ELECTRON DEV, V32, P2292

[3]

COOPER RW, 1980, ASTM STP, V712, P47

[4] MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS [J].

GONZALEZ, FN ;

NEUGROSCHEL, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :413-416

[5]

HOWER PL, 1980, ASTM STP, V712, P47

[6] THE EFFECT OF BUILT-IN DRIFT FIELD AND EMITTER RECOMBINATIONS ON FCVD OF A P-N-JUNCTION DIODE [J].

JAIN, SC ;

RAY, UC .

SOLID-STATE ELECTRONICS, 1983, 26 (06) :515-523

[7]

LIANG AY, 1980, ASTM STP, V712, P73

[8] DIFFUSION LENGTH AND LIFETIME DETERMINATION IN P-N-JUNCTION SOLAR-CELLS AND DIODES BY FORWARD-BIASED CAPACITANCE MEASUREMENTS [J].

NEUGROSCHEL, A ;

CHEN, PJ ;

PAO, SC ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :485-490

[9] FUNCTIONAL MODELING OF INTEGRATED INJECTION LOGIC - DC ANALYSIS [J].

ROFAIL, SS ;

ELMASRY, MI ;

HEASELL, EL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :234-241

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

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