SCHOTTKY-BARRIER RESTRICTED ARRAYS OF PHASE-COUPLED ALGAAS QUANTUM WELL LASERS

被引：17

作者：

TEMKIN, H

DUPUIS, RD

LOGAN, RA

VANDERZIEL, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：473 / 475

页数：3

相关论文

共 17 条

[1] HIGH-POWER MULTIPLE-STRIPE INJECTION-LASERS WITH CHANNEL GUIDES
ACKLEY, DE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) : 1910 - 1917
[2] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS
AMANN, MC
[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 441 - 442
[3] A SCHOTTKY-BARRIER-DELINEATED STRIPE STRUCTURE FOR A GAINASP-INP-CW LASER
BOULEY, JC
CHAMINANT, G
CHARIL, J
DEVOLDERE, P
GILLERON, M
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 845 - 847
[4] NEW RESTRICTED CONTACT LEDS USING A SCHOTTKY-BARRIER
CHIN, AK
ZIPFEL, CL
DUTT, BV
DIGIUSEPPE, MA
BAUERS, KB
ROCCASECCA, DD
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : 1487 - 1491
[5] CURRENT DIRECTIONS IN GAAS-LASER DEVICE DEVELOPMENT
DIXON, RW
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (05): : 669 - 722
[6] Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1
[7] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD
HERSEE, SD
DIFORTEPOISSON, MA
BALDY, M
DUCHEMIN, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 53 - 57
[8] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
HOLONYAK, N
KOLBAS, RM
LAIDIG, WD
VOJAK, BA
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739
[9] DIFFRACTION COUPLED PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY
KATZ, J
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 554 - 556
[10] LATERAL BEAM COLLIMATION OF A PHASED-ARRAY SEMICONDUCTOR-LASER
SCIFRES, D
BURNHAM, RD
STREIFER, W
BERNSTEIN, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 614 - 616