MECHANISM OF SILICON SURFACE ROUGHENING BY REACTIVE ION ETCHING

被引：40

作者：

OEHRLEIN, GS

SCHAD, RG

JASO, MA

机构：

[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA

来源：

关键词：

D O I：

10.1002/sia.740080604

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：243 / 246

页数：4

共 7 条

[1]

BRIGGS D, 1983, PRACTICAL SURFACE AN

CHUANG, TJ .

[3] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J].

COBURN, JW ;

WINTERS, HF .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :91-116

[4]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[5] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J].

SCHWARTZ, GC ;

ROTHMAN, LB ;

SCHOPEN, TJ .

[6] GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION [J].

VOSSEN, JL .

[7]

Wagner C.D, 1978, HDB XRAY PHOTOELECTR