DEEP LEVELS ASSOCIATED WITH NITROGEN IN SILICON

被引：45

作者：

TOKUMARU, Y ^{[1
]}

OKUSHI, H ^{[1
]}

MASUI, T ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO LTD,ANNAKA,GUMMA 37901,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 07期

关键词：

D O I：

10.1143/JJAP.21.L443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L443 / L444

页数：2

共 9 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2]

BROWER KL, 1981, 11TH P INT C DEF RAD, P491

[3]

BROWER KL, 1980, PHYS REV LETT, V44, P1672

[4] NITROGEN IN SILICON [J].

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THURMOND, CD .

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[5] OXYGEN-RELATED DONOR STATES IN SILICON [J].

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BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[6] NITROGEN-IMPLANTED SILICON .2. ELECTRICAL PROPERTIES [J].

MITCHELL, JB ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :335-343

[7] NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].

MITCHELL, JB ;

PRONKO, PP ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :332-334

[8] PHOTO-LUMINESCENCE ASSOCIATED WITH NITROGEN IN SILICON [J].

TAJIMA, M ;

MASUI, T ;

ABE, T ;

NOZAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :L423-L425

[9]

YATSURUGI Y, 1973, J ELECTROCHEM SOC, V120, P957

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