NITROGEN-IMPLANTED SILICON .2. ELECTRICAL PROPERTIES

被引：48

作者：

MITCHELL, JB

SHEWCHUN, J

THOMPSON, DA

DAVIES, JA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA

[2] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,SOLID STATE SCI BRANCH,CHALK RIVER,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.321340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：335 / 343

页数：9

共 24 条

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