GROWTH OF CDGEAS2 SINGLE-CRYSTALS BY THE CHEMICAL VAPOR TRANSPORT METHOD

被引：17

作者：

BAUMGARTNER, FP

LUXSTEINER, M

BUCHER, E

机构：

[1] Department of Physics, University of Konstanz, Konstanz

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 08期

关键词：

CdGeAs[!sub]2[!/sub; Crystal growth; Hall measurement; lattice parameter; minority carrier mobility;

D O I：

10.1007/BF02651384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown CdGeAs2 single crystals by chemical vapor transport (CVT), a method not previously applied for this compound. The crystallographic data of this chalcopyrite (cell parameters a 0 = 5.9456 ± 0.0001Å, c0 = 11.2131 ± 0.0007Å) and its electrical transport properties are reported. Predominantly n-type crystals are obtained (at RT n = 1 · 1017cm-3, μn = 2000 cm2(Vs)-1). Vacuum heat treatment at 500° C yields a type conversion from n- to p-type. In all p-type samples the minority carrier mobility is calculated to be larger than 10000 cm2(Vs)-1. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：777 / 781

页数：5

共 16 条

[1] SINGLE-CRYSTAL GROWTH OF CDSIAS2 BY CHEMICAL VAPOR TRANSPORT - ITS STRUCTURE AND ELECTRICAL-PROPERTIES [J].