PROTON-BOMBARDMENT IN N-TYPE AND P-TYPE GA0.47IN0.53AS

[1] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &

[2] FAVENNEC PN, 1973, APPL PHYS LETT, V23, P564

[3] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[5] ELECTRICAL AND OPTICAL PROPERTIES OF PROTON-BOMBARDED GALLIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 214 - 219

[6] HYDROGEN-ION BOMBARDMENT OF GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 981 - 983

[1] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &

[2] FAVENNEC PN, 1973, APPL PHYS LETT, V23, P564

[3] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[5] ELECTRICAL AND OPTICAL PROPERTIES OF PROTON-BOMBARDED GALLIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 214 - 219

[6] HYDROGEN-ION BOMBARDMENT OF GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 981 - 983