DIFFUSION CURRENTS IN SEMICONDUCTORS

被引：13

作者：

LANDSBERG, PT ^{[1
]}

HOPE, SA ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT MATH,SOUTHAMPTON,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(76)90098-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 174

页数：2

共 7 条

[1] DIFFUSION CURRENT IN HEAVILY DOPED SEMICONDUCTORS [J].

BACCARANI, G ;

MAZZONE, AM .

[2] ON THE DIFFUSION THEORY OF RECTIFICATION [J].

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 213 (1113) :226-237

[3]

LUTTINGER JM, 1964, PHYS REV, V135, P1505

[4] GENERALIZED EINSTEIN RELATION FOR SEMICONDUCTORS [J].

MARSHAK, AH ;

ASSAF, D .

[5]

NAG RB, 1975, SOLID STATE ELECTRON, V18, P110

[6]

SPENKE E, 1958, ELECTRONIC SEMICONDU, P293

[7] SEMICONDUCTOR CURRENT-FLOW EQUATIONS (DIFFUSION AND DEGENERACY) [J].

STRATTON, R .