DENSITY OF AMORPHOUS SILICON FILMS

被引：34

作者：

RENNER, O ^{[1
]}

ZEMEK, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST SOLID STATE PHYS, CUKROVARNICKA 10, 162 53 PRAGUE 6, CZECHOSLOVAKIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1973年 / B 23卷 / 11期

关键词：

D O I：

10.1007/BF01591210

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1273 / 1276

页数：4

共 16 条

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[3]

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[4]

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[5]

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[6] PHYSICAL PROPERTIES OF SPUTTERED AMORPHOUS GE - ROLE OF DEPOSITION RATE [J].

KOC, S ;

ZAVETOVA, M ;

ZEMEK, J ;

RENNER, O .

CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B, 1972, B 22 (12) :1296-&

[7]

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[8]

KOC S, 1972, C AMORPHOUS LIQUID G

[9] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J].

MOSS, SC ;

GRACZYK, JF .

PHYSICAL REVIEW LETTERS, 1969, 23 (20) :1167-&

[10]

MOSS SC, 1970, 10TH P INT C PHYS SE, P658

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