STATE OF ART OF ACRYLATE RESISTS - AN OVERVIEW OF POLYMER STRUCTURE AND LITHOGRAPHIC PERFORMANCE

被引：15

作者：

MOREAU, WM

机构：

来源：

OPTICAL ENGINEERING | 1983年 / 22卷 / 02期

关键词：

SEMICONDUCTOR DEVICE MANUFACTURE - Plastics Applications;

D O I：

10.1117/12.7973078

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The acrylate family of resists based on polymethyl methacrylate (PMMA) has paved the way for submicron lithography. The physical and chemical modifications, which have improved the performance of PMMA, are reviewed. These improvements include sensitivity to radiation (electron-beam, optical, ion, and x-ray), thermal and plasma process stability, and superior film quality. Structural modifications of the acrylate polymer chain have been the main contributors to enhanced lithographic performance.

引用

页码：181 / 184

页数：4

共 85 条

[1] MOLECULAR-WEIGHT DEPENDENCE OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESISTS [J].