PROPERTIES OF DOPED SILICON AND GERMANIUM INFRARED DETECTORS

被引：133

作者：

SCLAR, N ^{[1
]}

机构：

[1] ROCKWELL INT CORP, CTR SCI, DEPT ELECTROOPT, ANAHEIM, CA 92803 USA

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1984年 / 9卷 / 03期

关键词：

D O I：

10.1016/0079-6727(84)90001-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：149 / 257

页数：109

共 111 条

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