DISLOCATIONS AROUND SCRATCHES AND INDENTS ON +/-(111) SURFACE OF GALLIUM-ARSENIDE

被引:4
作者
SUROWIEC, MR [1 ]
LEIPNER, HS [1 ]
SCHREIBER, J [1 ]
机构
[1] MARTIN LUTHER UNIV,DEPT PHYS,O-4010 HALLE,GERMANY
关键词
D O I
10.1107/S0021889889008940
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:606 / 612
页数:7
相关论文
共 15 条
[1]  
CHU YM, 1981, I PHYS C SER, V60, P331
[2]   ON SOME ASPECTS OF THE MOBILITY OF DISLOCATIONS IN SLIGHTLY N-DOPED INSB SINGLE-CRYSTALS [J].
DIPERSIO, J ;
KESTELOOT, R .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :469-474
[3]   CATHODOLUMINESCENCE STUDIES OF DISLOCATIONS IN SEMICONDUCTORS [J].
DUPUY, M .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :277-287
[4]  
GEORGE A, 1985, I PHYSICS C SERIES, V76, P339
[5]   THEORETICAL-STUDY OF THE INFORMATION DEPTH OF THE CATHODOLUMINESCENCE SIGNAL IN SEMICONDUCTOR-MATERIALS [J].
HERGERT, W ;
PASEMANN, L .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :641-648
[6]  
HIRSCH PB, 1985, PHILOS MAG B, V52, P757
[7]   ANISOTROPIC DEFORMATION-BEHAVIOR OF GAAS [J].
HOCHE, HR ;
SCHREIBER, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :229-236
[8]  
LEIPNER HS, 1988, THESIS MARTIN LUTHER
[9]   DISLOCATION CORES IN SEMICONDUCTORS - FROM THE SHUFFLE OR GLIDE DISPUTE TO THE GLIDE AND SHUFFLE PARTNERSHIP [J].
LOUCHET, F ;
THIBAULTDESSEAUX, J .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (04) :207-219
[10]   RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V-COMPOUNDS [J].
MAEDA, K ;
TAKEUCHI, S .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :375-385