INGAALP VISIBLE-LIGHT LASER-DIODES AND LIGHT-EMITTING-DIODES

被引：12

作者：

ITAYA, K ^{[1
]}

SUGAWARA, H ^{[1
]}

HATAKOSHI, G ^{[1
]}

机构：

[1] TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90905-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we review and discuss the critical problems involved in the research and development of InGaAlP visible light devices along with some of our achievements. High p-doping of a cladding layer, and a multi-quantum-barrier structure improved the temperature characteristics of InGaAlP laser diodes. These techniques have made it possible to realize a high temperature CW operation above 70-degrees-C at the wavelength of 633 nm. New structure InGaAlP light-emitting diodes (LEDs) which employ an off-angle substrate and a Bragg reflector have improved both quantum efficiency and light extraction efficiency. Candera-class, high-brightness LEDs have been achieved for operation in the orange to green color region.

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收藏

页码：768 / 775

页数：8

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