MISFIT DISLOCATION-STRUCTURE AT A SI/SIXGE1-X STRAINED-LAYER INTERFACE

被引：46

作者：

RAJAN, K ^{[1
]}

DENHOFF, M ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R8,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1063/1.339597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1710 / 1712

页数：3

共 8 条

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[8] MECHANISM OF MISFIT DISLOCATION NETWORK FORMATION IN THE HETEROEPITAXIAL SYSTEM GE-GAAS (001)
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