RAMAN-SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GAP THIN-FILMS GROWN BY MO-CVD PROCESS USING [ET2GA-PET2]3 AS ONLY SOURCE

被引:13
作者
MAURY, F [1 ]
COMBES, M [1 ]
CONSTANT, G [1 ]
CARLES, R [1 ]
RENUCCI, JB [1 ]
机构
[1] UNIV TOULOUSE 3,PHYS SOLIDES LAB 74,F-31062 TOULOUSE,FRANCE
来源
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
关键词
D O I
10.1051/jphyscol:1982146
中图分类号
学科分类号
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页码:347 / 352
页数:6
相关论文
共 7 条
[1]   LATTICE-DYNAMICS OF GALLIUM-PHOSPHIDE [J].
BORCHERDS, PH ;
KUNC, K ;
ALFREY, GF ;
HALL, RL .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22) :4699-4706
[2]  
Carles R., 1980, Journal of the Physical Society of Japan, V49, P665
[3]   SECOND-ORDER RAMAN-SPECTRA AND PHONON DISPERSION IN GAP [J].
HOFF, RM ;
IRWIN, JC .
CANADIAN JOURNAL OF PHYSICS, 1973, 51 (01) :63-76
[4]   GAAS WHISKERS GROWN BY A THERMAL-DECOMPOSITION METHOD [J].
KASAHARA, J ;
KAJIWARA, K ;
YAMADA, T .
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (01) :23-28
[5]  
MORONSANU CE, 1981, 8TH P INT C CVD PENN, P403
[6]   DISORDER ACTIVATED RAMAN-SCATTERING IN GA1-XALXAS ALLOYS [J].
SAINTCRICQ, N ;
CARLES, R ;
RENUCCI, JB ;
ZWICK, A ;
RENUCCI, MA .
SOLID STATE COMMUNICATIONS, 1981, 39 (11) :1137-1141
[7]   VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS [J].
ZAOUK, A ;
SALVETAT, E ;
SAKAYA, J ;
MAURY, F ;
CONSTANT, G .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :135-144