OXIDATION OF ION-IMPLANTED METALS

被引:38
作者
GALERIE, A
CAILLET, M
PONS, M
机构
[1] CNRS, Equipe de Recherche, ST., -Martin d'Heres, FR, CNRS, Equipe de Recherche, ST. -Martin d'Heres, FR
来源
MATERIALS SCIENCE AND ENGINEERING | 1985年 / 69卷 / 02期
关键词
MATERIALS - Oxidation - RADIATION DAMAGE;
D O I
10.1016/0025-5416(85)90332-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The mechanisms involved in the modification of the thermal oxidation of metals and alloys by ion implantation are reviewed and discussed. Radiation damage is thought to have some influence, but chemical effects always seem to be of greater importance. These can be closely related to the oxidizability of the implanted species. In the very early stages of oxidation, oxidizable elements can act as nucleation promoters and allow the development of more coherent scales. The solubility of the implants in the matrix is an important parameter in the discussion of the blocking of material transport along fast diffusion paths. The presence of particles in the matrix or in the oxide scale is also thought to be of importance either because the particles act as sinks for flowing defects or because they modify the relief of the mechanical stresses resulting from the scale growth.
引用
收藏
页码:329 / 340
页数:12
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