INTERFERENCE EFFECTS - A KEY TO UNDERSTANDING FORBIDDEN RAMAN-SCATTERING BY LO PHONONS IN GAAS

被引：157

作者：

MENENDEZ, J

CARDONA, M

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3696

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3696 / 3704

页数：9

共 39 条

[11] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :433-436

[12] MECHANISM OF STRONG RESONANT 1LO RAMAN-SCATTERING [J].

GOGOLIN, AA ;

RASHBA, EI .

SOLID STATE COMMUNICATIONS, 1976, 19 (12) :1177-1179

[13]

GOGOLIN AA, 1976, 13TH P INT C PHYS SE, P284

[14] ABSOLUTE CROSS-SECTION OF 1ST-ORDER RAMAN-SCATTERING IN GAAS [J].

GRIMSDITCH, MH ;

OLEGO, D ;

CARDONA, M .

PHYSICAL REVIEW B, 1979, 20 (04) :1758-1761

[15] RESONANT RAMAN SCATTERING FROM LO PHONONS IN POLAR SEMICONDUCTORS [J].

HAMILTON, DC .

PHYSICAL REVIEW, 1969, 188 (03) :1221-&

[16]

Klochikhin A. A., 1976, SOV PHYS JETP, V44, P1176

[17]

KLOCHIKHIN AA, 1975, JETP LETT+, V21, P122

[18] ENHANCEMENT OF RAMAN CROSS SECTION IN CDS DUE TO RESONANT ABSORPTION [J].

LEITE, RCC ;

PORTO, SPS .

PHYSICAL REVIEW LETTERS, 1966, 17 (01) :10-&

[19]

MADELUNG O, 1982, LANDOLTBORNSTEIN, V3, P218

[20] THEORY OF ONE-PHONON RESONANCE RAMAN EFFECT [J].

MARTIN, RM .

PHYSICAL REVIEW B, 1971, 4 (10) :3676-&

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