SPUTTER DEPOSITED TITANIUM DISILICIDE AT HIGH SUBSTRATE TEMPERATURES

被引：16

作者：

TANIELIAN, M

BLACKSTONE, S

LAJOS, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：444 / 446

页数：3

共 10 条

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[2] OXIDATION OF SILICIDE THIN-FILMS - TISI2 [J].

DHEURLE, F ;

IRENE, EA ;

TING, CY .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :361-363

[3]

LAU CK, 1983, ELECTROCHEMICAL SOC, P569

[4]

LAU CK, 1982, INT EL DEV M, V82, P714

[5]

MURAO Y, 1983, IEEE IEDM, V83, P518

[6]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[7]

TANIELIAN M, 1984, ELECTR SOC EXT ABST, P145

[8]

TANIELIAN M, UNPUB J ELECTROCHEM

[9] COMPOSITE TISI2/N+ POLY-SI LOW-RESISTIVITY GATE ELECTRODE AND INTERCONNECT FOR VLSI DEVICE TECHNOLOGY [J].

WANG, KL ;

HOLLOWAY, TC ;

PINIZZOTTO, RF ;

SOBCZAK, ZP ;

HUNTER, WR ;

TASCH, AF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :547-553

[10]

1983, WORKSHOP REFRACTORY

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