COMPOSITE TISI2/N+ POLY-SI LOW-RESISTIVITY GATE ELECTRODE AND INTERCONNECT FOR VLSI DEVICE TECHNOLOGY

被引：32

作者：

WANG, KL

HOLLOWAY, TC

PINIZZOTTO, RF

SOBCZAK, ZP

HUNTER, WR

TASCH, AF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：547 / 553

页数：7

共 9 条

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[7] MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES [J].

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