MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[2] Crook D. L., 1979, 17th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1979.362863

[3] SINGLE-CHIP VLSI ECHO CANCELER [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (02): : 149 - 160

[4] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[5] Grove A. S., 1967, PHYS TECHNOL S, P345

[6] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[7] MCKENNY VG, 1977, FEB IEEE INT SOL STA

[8] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[9] MOCHIZUKI T, 1977, 9TH P C SOL STAT DEV

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[1] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[2] Crook D. L., 1979, 17th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1979.362863

[3] SINGLE-CHIP VLSI ECHO CANCELER [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (02): : 149 - 160

[4] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[5] Grove A. S., 1967, PHYS TECHNOL S, P345

[6] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[7] MCKENNY VG, 1977, FEB IEEE INT SOL STA

[8] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[9] MOCHIZUKI T, 1977, 9TH P C SOL STAT DEV

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417