SEMICONDUCTOR-DEVICE SIMULATION USING GENERALIZED MOBILITY MODELS

被引：19

作者：

LAUX, SE ^{[1
]}

BYRNES, RG ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 03期

关键词：

MATHEMATICAL TECHNIQUES - Finite Difference Method - SEMICONDUCTOR DEVICES; MOS - Mathematical Models - SEMICONDUCTOR DEVICES; MOSFET - Transport Properties;

D O I：

10.1147/rd.293.0289

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A method for discretizing the semiconductor transport equations using generalized mobility models is developed as an extension of the Scharfetter-Gummel finite difference approach. The method is sufficiently general to be applicable to nearly arbitrary empirical mobility models (including those for MOS surface effects) and may be used on a variety of mesh types in two or three dimensions. The impact of generalized mobility models on the sparsity of resulting discrete equations is discussed. Convergence rate of a Newton's method linearization of the nonlinear system of equations is measured and interpreted. Some computational results from a study of short-channel MOSFETs are presented to illustrate the approach.

引用

页码：289 / 301

页数：13

共 32 条

[1] TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS [J].