OBSERVATIONS OF POINT-DEFECTS IN SILICON BY MEANS OF DARK-FIELD LATTICE PLANE IMAGING

被引：21

作者：

ZAKHAROV, ND ^{[1
]}

PASEMANN, M ^{[1
]}

ROZHANSKI, VN ^{[1
]}

机构：

[1] ACAD SCI GDR,INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 01期

关键词：

D O I：

10.1002/pssa.2210710133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：275 / 281

页数：7

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