THERMAL PARAMETER EXTRACTION FOR BIPOLAR CIRCUIT MODELING

被引：7

作者：

FOX, RM

LEE, SG

机构：

[1] VLSI TCAD Group, Department of Electrical Engineering, University of Florida, Gainesville

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 19期

关键词：

MODELING; BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A practical method is presented for extracting the thermal spreading resistance of BJTs, which is needed for accurate circuit simulation. The method uses the output resistance as the temperature sensitive parameter. Measurements can be made in the time or frequency domain.

引用

页码：1719 / 1720

页数：2

共 8 条

[1]

DAVIS WF, 1988, EFFECT THERMAL FEEDB

[2] LOCAL THERMAL EFFECTS IN HIGH-PERFORMANCE BIPOLAR-DEVICES CIRCUITS [J].