PHOTOLUMINESCENCE OF INGAAS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELLS - EFFECT OF EXCITATION INTENSITY

被引：14

作者：

DEVINE, RLS

MOORE, WT

机构：

[1] Natl Research Council of Canada,, Ottawa, Ont, Can, Natl Research Council of Canada, Ottawa, Ont, Can

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 03期

关键词：

D O I：

10.1016/0038-1098(88)90881-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：177 / 179

页数：3

共 20 条

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
KAMADA, M
TAIRA, K
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2833 - 2836
[2] HIGH-EFFICIENCY CARRIER COLLECTION AND STIMULATED-EMISSION IN THIN (50 A) PSEUDOMORPHIC INXGA1-XAS QUANTUM-WELLS
ANDERSON, NG
LO, YC
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 758 - 760
[3] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES
ANDERSON, NG
LAIDIG, WD
KOLBAS, RM
LO, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367
[4] BRINBERG D, 1985, PHYS REV, V31, P7788
[5] RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS
BRUM, JA
BASTARD, G
[J]. PHYSICAL REVIEW B, 1986, 33 (02) : 1420 - 1423
[6] DEVINE RLS, IN PRESS J APPL PHYS
[7] TRANSIENT OPTICAL-SPECTRA OF A DENSE EXCITON GAS IN A DIRECT-GAP SEMICONDUCTOR
FEHRENBACH, GW
SCHAFER, W
TREUSCH, J
ULBRICH, RG
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (17) : 1281 - 1284
[8] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
FRITZ, IJ
PICRAUX, ST
DAWSON, LR
DRUMMOND, TJ
LAIDIG, WD
ANDERSON, NG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
[9] RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
JUNG, H
KUHL, J
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (17) : 1588 - 1591
[10] QUANTUM SIZE EFFECTS IN GAAS/GAASXP1-X STRAINED-LAYER SUPERLATTICES
GOURLEY, PL
BIEFELD, RM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 749 - 751

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