TOTAL DOSE AND DOSE-RATE RADIATION CHARACTERIZATION OF EPI-CMOS RADIATION HARDENED MEMORY AND MICROPROCESSOR DEVICES

被引：3

作者：

GINGERICH, BL

HERMSEN, JM

LEE, JC

SCHROEDER, JE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1332 / 1336

页数：5

共 7 条

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[6] AN ADVANCED, RADIATION HARDENED BULK CMOS-LSI TECHNOLOGY [J].

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