CRYSTALLINITY OF A-AXIS ORIENTED YBA2CU3O7-DELTA THIN-FILM EPITAXIALLY GROWN ON NDGAO3 (110) BY 95 MHZ MAGNETRON SPUTTERING

被引：32

作者：

HOMMA, N ^{[1
]}

OKAYAMA, S ^{[1
]}

TAKAHASHI, H ^{[1
]}

YOSHIDA, I ^{[1
]}

MORISHITA, T ^{[1
]}

TANAKA, S ^{[1
]}

HAGA, T ^{[1
]}

YAMAYA, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,DEPT NUCL ENGN,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An a-axis oriented 400 angstrom YBa2Cu3O7-delta film has been epitaxially deposited on a NdGaO3 (110) substrate by rf magnetron sputtering using a single YBa2Cu5O(x) target. An excitation frequency of 94.92 MHz, seven times as high as the conventionally used 13.56 MHz, results in a lower self-bias voltage which reduces degradation of films caused by resputtering due to negatively charged oxygen. Sharp streaks corresponding to the c-axis lattice parameter of YBa2Cu3O7-delta have been observed by reflection high-energy electron diffraction, showing that the c-axis is parallel to the surface of the NdGaO3 substrate and the film surface is smooth on an atomic scale. The crystallinity has been characterized by Rutherford backscattering channeling analysis. A minimum yield, chi-min of 3.2%, has confirmed excellent crystallinity of the a-axis oriented film.

引用

页码：1383 / 1385

页数：3

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