GAAS HBTS FOR HIGH-SPEED DIGITAL INTEGRATED-CIRCUIT APPLICATIONS

被引:11
作者
CHANG, CTM
YUAN, HT
机构
[1] Texas Instruments, Dallas, Texas
关键词
D O I
10.1109/5.248961
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs HBT technology has emerged as one of the most important developments for digital circuits operating at clock frequencies of 100 MHz and higher. High-speed frequency dividers operating as high as 34.8 GHz and VLSI circuits as complex as 32-b CPU's operating at 200-MHz clock rate have been demonstrated. This paper reviews the role of GaAs HBT technologies for high-speed digital IC applications. The requirements for high-speed IC's and the characteristics of various HBT device structures and logic families are discussed. A summary of published results of the ultrahigh-speed circuits and the status of several high-speed VLSI circuits are presented to provide a guide for future developments.
引用
收藏
页码:1727 / 1743
页数:17
相关论文
共 68 条
[1]   A MONOLITHIC DIGITAL CHIRP SYNTHESIZER CHIP WITH I-CHANNEL AND Q-CHANNEL [J].
ANDREWS, V ;
CHANG, CTM ;
CAYO, JD ;
SABIN, S ;
WHITE, WA ;
HARRIS, MP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (10) :1321-1326
[2]  
ANDREWS V, 1992, 1992 GOMAC, P431
[3]  
ASBECK PM, 1990, INTRO SEMICONDUCTOR
[4]   COMPARISON OF SILICON BIPOLAR AND GAA1AS GAAS HETEROJUNCTION BIPOLAR TECHNOLOGIES USING A PROPAGATION DELAY EXPRESSION [J].
ASHBURN, P ;
REZAZADEH, AA ;
CHOR, EF ;
BRUNNSCHWEILER, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (02) :512-519
[5]  
BARNA A, 1981, VHSIC TECHNOLOGIES T
[6]  
BROWNE J, 1988, MICROWAVE RF JUL, P129
[7]  
Burghartz J. N., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P297, DOI 10.1109/IEDM.1990.237171
[8]  
CARROLL R, 1991, 1991 GOMAC, P541
[9]   THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS-MESFET RING OSCILLATORS [J].
CHANG, CTM ;
NAMORDI, MR ;
WHITE, WA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1805-1809
[10]  
CHANG CTM, 1990, INTRO SEMICONDUCTOR