COMPARISON OF SILICON BIPOLAR AND GAA1AS GAAS HETEROJUNCTION BIPOLAR TECHNOLOGIES USING A PROPAGATION DELAY EXPRESSION

被引：4

作者：

ASHBURN, P ^{[1
]}

REZAZADEH, AA ^{[1
]}

CHOR, EF ^{[1
]}

BRUNNSCHWEILER, A ^{[1
]}

机构：

[1] GEC, HIRST RES CTR, WEMBLEY HA9 7PP, MIDDX, ENGLAND

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 02期

关键词：

D O I：

10.1109/4.18617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：512 / 519

页数：8

相关论文

共 21 条

[1] ASHBURN P, 1987, BIPOLAR CIRCUITS TEC, P61
[2] ASHBURN P, 1988, DESIGN REALISATION B
[3] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS
CHANG, MCF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
SHENG, NH
HIGGINS, JA
MILLER, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305
[4] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE
CHANG, MF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
MILLER, DL
[J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174
[5] A PROPAGATION-DELAY EXPRESSION AND ITS APPLICATION TO THE OPTIMIZATION OF POLYSILICON EMITTER ECL PROCESSES
CHOR, EF
BRUNNSCHWEILER, A
ASHBURN, P
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (01) : 251 - 259
[6] SELF-ALIGNED TRANSISTORS WITH POLYSILICON EMITTERS FOR BIPOLAR VLSI
CUTHBERTSON, A
ASHBURN, P
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 162 - 167
[7] ICHINO H, 1988, BCTM TECH DIG, P15
[8] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164
[9] KONAKA S, 1987, 19TH C SOL STAT DEV, P331
[10] ON THE OPTIMIZATION OF VLSI CONTACTS
MADDOX, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 682 - 690