SELF-ALIGNED TRANSISTORS WITH POLYSILICON EMITTERS FOR BIPOLAR VLSI

[1] ARMIGLIATO A, 1979, 9TH P ESSDERC

[2] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 853 - 860

[3] EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 95 - 104

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] CUTHBERTSON A, UNPUB IEEE T ELECTRO

[6] DUFFILL JE, 1982, 12TH P ESSDERC

[7] FINETTI M, 1980, P I ELECTR ENG, V127, P37

[8] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[9] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 665 - 671

[10] THEORY OF TUNNELING [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +

[1] ARMIGLIATO A, 1979, 9TH P ESSDERC

[2] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 853 - 860

[3] EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 95 - 104

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[5] CUTHBERTSON A, UNPUB IEEE T ELECTRO

[6] DUFFILL JE, 1982, 12TH P ESSDERC

[7] FINETTI M, 1980, P I ELECTR ENG, V127, P37

[8] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[9] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 665 - 671

[10] THEORY OF TUNNELING [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +