ON THE OPTIMIZATION OF VLSI CONTACTS

[1] [Anonymous], SEMICONDUCTOR INT

[2] ARMIGLIATO A, 1980, P MATER RES SOC S AM

[3] BEHAVIOR OF BORON MOLECULAR ION IMPLANTS INTO SILICON [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 537 - 547

[4] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &

[5] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[6] BRORS DL, 1984, SOLID STATE TECHNOL, V27, P313

[7] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[8] CHEN JY, 1981, S VLSI TECH DIG, V2, P22

[9] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180

[10] CHERNYAEV AV, 1979, SOV MICROELECTRON+, V8, P377

[1] [Anonymous], SEMICONDUCTOR INT

[2] ARMIGLIATO A, 1980, P MATER RES SOC S AM

[3] BEHAVIOR OF BORON MOLECULAR ION IMPLANTS INTO SILICON [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 537 - 547

[4] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &

[5] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[6] BRORS DL, 1984, SOLID STATE TECHNOL, V27, P313

[7] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[8] CHEN JY, 1981, S VLSI TECH DIG, V2, P22

[9] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180

[10] CHERNYAEV AV, 1979, SOV MICROELECTRON+, V8, P377