COMPARISON OF SILICON BIPOLAR AND GAA1AS GAAS HETEROJUNCTION BIPOLAR TECHNOLOGIES USING A PROPAGATION DELAY EXPRESSION

被引：4

作者：

ASHBURN, P ^{[1
]}

REZAZADEH, AA ^{[1
]}

CHOR, EF ^{[1
]}

BRUNNSCHWEILER, A ^{[1
]}

机构：

[1] GEC, HIRST RES CTR, WEMBLEY HA9 7PP, MIDDX, ENGLAND

来源：

关键词：

D O I：

10.1109/4.18617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：512 / 519

页数：8

共 21 条

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