DEFECT CHARACTERIZATION IN MONOCRYSTALLINE SILICON GROWN OVER SIO2

[11] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[12] LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1151 - 1154

[13] MCGINN JT, 1982, ELECTROCHEMICAL SOC, V82, P246

[14] MELLEND A, 1980, APPL PHYS LETT, V37, P560

[15] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L176 - L178

[11] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[12] LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1151 - 1154

[13] MCGINN JT, 1982, ELECTROCHEMICAL SOC, V82, P246

[14] MELLEND A, 1980, APPL PHYS LETT, V37, P560

[15] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L176 - L178